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STGP7NC60H - STGD7NC60H
N-CHANNEL 14A - 600V TO-220/DPAK Very Fast PowerMESHTM IGBT
Table 1: General Features
TYPE STGP7NC60H STGD7NC60HT4
s s s s
Figure 1: Package
IC @100C 14 A 14 A
3 1
VCES 600 V 600 V
VCE(sat) (Max) @25C < 2.5 V < 2.5 V
s
LOWER ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOWER CRES/CIES RATIO HIGH FREQUENCY OPERATION UP TO 70 KHz NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRIBUTION
3 1 2
TO-220
DPAK
DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency applications in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop.
Weight for TO-220: 1.92gr 0.01 Weight for DPAK: 0.38gr 0.01 Figure 2: Internal Schematic Diagram
APPLICATIONS HIGH FREQUENCY INVERTERS s SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES s MOTOR DRIVERS
s
Table 2: Order Code
PART NUMBER STGP7NC60H STGD7NC60HT4 MARKING GP7NC60H D7NC60H PACKAGE TO-220 DPAK PACKAGING TUBE TAPE & REEL
Rev. 2 June 2005 1/12
STGP7NC60H - STGD7NC60H
Table 3: Absolute Maximum ratings
Symbol VCES VECR VGE IC IC ICM ( ) PTOT Tstg Tj Parameter TO-220 Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current (continuous) at TC = 25C (#) Collector Current (continuous) at TC = 100C (#) Collector Current (pulsed) Total Dissipation at TC = 25C Derating Factor Storage Temperature Operating Junction Temperature 80 0.64 - 55 to 150 600 20 20 25 14 50 70 0.56 Value DPAK V V V A A A W W/C C Unit
( ) Pulse width limited by max. junction temperature.
Table 4: Thermal Data
Min. Rthj-case Rthj-amb TL Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature for Soldering Purpose (1.6 mm from case, for 10 sec.) TO-220 DPAK TO-220 DPAK TO-220 DPAK 300 275 Typ. Max. 1.56 1.78 62.5 100 C/W C/W C
ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED) Table 5: Main Parameters
Symbol VBR(CES) ICES IGES VGE(th) VCE(sat) Parameter Collector-Emitter Breakdown Voltage Collector cut-off Current (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Gate Threshold Voltage Collector-Emitter Saturation Voltage Test Conditions IC = 1 mA, VGE = 0 VCE = Max Rating, TC= 25 C VCE = Max Rating, TC= 125 C VGE = 20V , VCE = 0 VCE = VGE, IC = 250 A VGE = 15V, IC = 7 A VGE = 15V, IC = 7 A, Tc= 125C 3.75 1.85 1.7 Min. 600 10 1 100 5.75 2.5 Typ. Max. Unit V A mA nA V V V
(#) Calculated according to the iterative formula: T -T JMAX C I ( T ) = ------------------------------------------------------------------------------------------------CC R xV (T , I ) THJ - C CESAT ( M AX ) C C
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ELECTRICAL CHARACTERISTICS (CONTINUED) Table 6: Dynamic
Symbol gfs (1) Cies Coes Cres Qg Qge Qgc ICL Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-Off SOA Minimum Current VCE = 390 V, IC = 7 A, VGE = 15 V (see Figure 21) Vclamp = 480 V , Tj = 150C RG = 10 , VGE = 15 V 50 Test Conditions VCE = 15 V , IC = 7 A VCE = 25 V, f= 1 MHz, VGE = 0 Min. Typ. 4.30 720 81 17 35 7 16 48 Max. Unit S pF pF pF nC nC nC A
(1) Pulsed: Pulse duration= 300 s, duty cycle 1.5%
Table 7: Switching On
Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on Parameter Turn-on Delay Time Current Rise Time Turn-on Current Slope Turn-on Delay Time Current Rise Time Turn-on Current Slope Test Conditions VCC = 390 V, IC = 7 A RG= 10 , VGE= 15V, Tj= 25C (see Figure 18) VCC = 390 V, IC = 7 A RG= 10 , VGE= 15V, Tj= 125C (see Figure 19) Min. Typ. 18.5 8.5 1060 18.5 7 1000 Max. Unit ns ns A/s ns ns A/s
Table 8: Switching Off
Symbol tr(Voff) td(off) tf tr(Voff) td(off) tf Parameter Off Voltage Rise Time Turn-off Delay Time Current Fall Time Off Voltage Rise Time Turn-off Delay Time Current Fall Time Test Conditions Vcc = 390 V, IC = 7 A, RG = 10 , VGE = 15 V TJ = 25 C (see Figure 19) Vcc = 390 V, IC = 7 A, RG = 10 , VGE = 15 V Tj = 125 C (see Figure 19) Min. Typ. 27 72 60 56 116 105 Max. Unit ns ns ns ns ns ns
Table 9: Switching Energy
Symbol Eon (2) Eoff (3) Ets Eon (2) Eoff (3) Ets Parameter Turn-on Switching Losses Turn-off Switching Loss Total Switching Loss Turn-on Switching Losses Turn-off Switching Loss Total Switching Loss Test Conditions VCC = 390 V, IC = 7 A RG= 10 , VGE= 15V, Tj= 25C (see Figure 19) VCC = 390 V, IC = 7 A RG= 10 , VGE= 15V, Tj= 125C (see Figure 19) Min. Typ. 95 115 210 140 215 355 Max 125 150 275 Unit J J J J J J
2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25C and 125C) (3)Turn-off losses include also the tail of the collector current.
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Figure 3: Output Characteristics Figure 6: Transfer Characteristics
Figure 4: Transconductance
Figure 7: Collector-Emitter On Voltage vs Temperature
Figure 5: Collector-Emitter On Voltage vs Collector Current
Figure 8: Normalized Gate Threshold vs Temperature
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Figure 9: Normalized Breakdown Voltage vs Temperature Figure 12: Gate Charge vs Gate-Emitter Voltage
Figure 10: Capacitance Variations
Figure 13: Total Switching Losses vs Temperature
Figure 11: Total Switching Losses vs Gate Resistance
Figure 14: Total Switching Losses vs Collector Current
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Figure 15: Thermal Impedance for TO-220 Figure 18: Ic vs Frequency
Figure 16: Thermal Impedance for DPAK
Figure 17: Turn-Off SOA
For a fast IGBT suitable for high frequency applications, the typical collector current vs. maximum operating frequency curve is reported. That frequency is defined as follows: fMAX = (PD - PC) / (EON + EOFF) 1) The maximum power dissipation is limited by maximum junction to case thermal resistance: PD = T / RTHJ-C considering T = TJ - TC = 125 C- 75 C = 50C 2) The conduction losses are: PC = IC * VCE(SAT) * with 50% of duty cycle, VCESAT typical value @125C. 3) Power dissipation during ON & OFF commutations is due to the switching frequency: PSW = (EON + EOFF) * freq. 4) Typical values @ 125C for switching losses are used (test conditions: VCE = 390V, VGE = 15V, RG = 3.3 Ohm). Furthermore, diode recovery energy is included in the EON (see note 2), while the tail of the collector current is included in the EOFF measurements (see note 3).
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Figure 19: Test Circuit for Inductive Load Switching Figure 21: Gate Charge Test Circuit
Figure 20: Switching Waveforms
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TO-220 MECHANICAL DATA
DIM. A b b1 c D E e e1 F H1 J1 L L1 L20 L30 mm. MIN. 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 TYP MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 MIN. 0.173 0.024 0.045 0.019 0.60 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 0.645 1.137 0.151 0.116 inch TYP. MAX. 0.181 0.034 0.066 0.027 0.620 0.409 0.106 0.202 0.052 0.256 0.107 0.551 0.154
oP
Q
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TO-252 (DPAK) MECHANICAL DATA
mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0o 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 0.8 1.00 8o 0.024 0o TYP. MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 0.039 0o inch TYP. MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398
DIM.
P032P_B
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DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.795 0.645 1.968 0.881 BULK QTY 2500 0.724 0.520 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R
W
BASE QTY 2500
mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40
15.7 16.3
inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 1.574
0.618 0.641
MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1
0.319
0.075 0.082
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Table 10: Revision History
Date 20-Aug-2004 09-Jun-2005 Revision 1 2 New datasheet Modified title Description of Changes
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
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